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BB506C - Built in Biasing Circuit MOS FET IC UHF RF Amplifier

Key Features

  • Built in Biasing Circuit; To reduce using parts cost & PC board space.
  • High gain www. DataSheet4U. com PG = 24 dB typ. (f = 900 MHz).
  • Low noise NF = 1.4 dB typ. (f = 900 MHz).
  • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz).
  • Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline.

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Datasheet Details

Part number BB506C
Manufacturer Renesas
File Size 146.66 KB
Description Built in Biasing Circuit MOS FET IC UHF RF Amplifier
Datasheet download datasheet BB506C Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BB506C Built in Biasing Circuit MOS FET IC UHF RF Amplifier REJ03G1246-0100 Rev.1.00 Jun. 27, 2005 Features • Built in Biasing Circuit; To reduce using parts cost & PC board space. • High gain www.DataSheet4U.com PG = 24 dB typ. (f = 900 MHz) • Low noise NF = 1.4 dB typ. (f = 900 MHz) • Low output capacitance Coss = 1.1 pF typ. (f = 1 MHz) • Provide mini mold packages: CMPAK-4 (SOT-343mod) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Notes: 1. Marking is “FS-“. 2. BB506C is individual type number of RENESAS BBFET.