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H5N1503P
Silicon N Channel MOS FET High Speed Power Switching
REJ03G0186-0100Z Rev.1.00 Mar.10.2004
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
TO-3P
D
G
1. Gate 2. Drain (Flange) 3. Source
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 150 ±30 70 210 70 35 91.8 150 0.
H5N1503P Datasheet
