H5N1506P Datasheet | Renesas

Features - Low on-resistance - Low leakage current .. - High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) IDR Note1 IDR (pulse) Note3 IAP EARNote3 Pch Note2 θch-c Tch Tstg Note1 Ratings 150 ±30 98 294 98 294 48 172 150 0.833 150 - 55 to +150 Unit V V A A A A A m J W °C/W °C °C Rev.2.00 Jul 03, 2006 page 1 of 6 Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance .. Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 150 - - 3.0 36 - - - - - - - - - - - - - - Typ - - - - 60 0.014 4900 1000 120 60 380 220 250 100 24 45 1.0 150 1.0 Max - 1 ±0.1 4.5 - 0.016 - - - - - - - - - - 1.5 - - Unit V µA µA V S Ω p F p F p F ns ns ns ns n C n C n C V ns µC Test conditions ID = 10 m A, VGS = 0 VDS = 150 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 m A ID = 47.5 A, VDS = 10 V Note4 ID = 47.5 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 47.5 A VGS = 10 V RL = 1.58 Ω Rg = 10...