H5N2306PF Datasheet | Renesas

Features - Low on-resistance - Low leakage current .. - High speed switching Outline TO-3PFM G 1 S 1. Gate 2. Drain 3. Source Rev.2.00, Jun.25.2004, page 1 of 9 Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 230 ±30 30 160 30 160 15 60 2.08 150 - 55 to +150 Rating V V A A A A A W °C/W °C °C Unit Avalanche current IAP Note3 Channel dissipation Pch Note2 .. Channel to case thermal impedance θch-c Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Rev.2.00, Jun.25.2004, page 2 of 9 Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance .. Reverse transfer capacitance Turn-on deray time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 230 - - 2.5 19 - - - - - - - - - - - - - - Typ - - - - 32 0.041 3500 480 40 45 110 125 80 70 17 24 0.9 170 1.0 - 1 ±0.1 4.0 - 0.052 - - - - - - - - - - 1.4 - - Max V µA µA V S Ω p F p F p F ns ns ns ns n C n C n C V ns µC Unit Test condition ID = 10 m A, VGS = 0 VDS = 230 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 m A ID = 15 A, VDS = 10 V Note4 ID = 15 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 15 A VGS = 10 V RL = 6.7 Ω Rg = 10 Ω VDD = 160 V VGS = 10 V ID = 30 A IF = 30 A, VGS = 0 Note4...