H5N2306PF - Silicon N Channel MOS FET High Speed Power Switching

Name: H5N2306PF
SKU: H5N2306PF-628923

Renesas Technology

The H5N2306PF by Renesas Technology is a Silicon N Channel MOS FET High Speed Power Switching. Below is the official datasheet preview.

Datasheet Details

Part number	H5N2306PF
Manufacturer	Renesas Technology
File Size	127.81 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H5N2306PF_RenesasTechnology.pdf
Additional preview pages of the H5N2306PF datasheet.

Low on-resistance.
Low leakage current www. DataSheet4U. com.
High speed switching Outline TO-3PFM D G 1 S 1. Gate 2. Drain 3. Source 2 3 Rev.2.00, Jun.25.2004, page 1 of 9 H5N2306PF Absolute Maximum Rating (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 230 ±30 30 160 30 160.

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Published: Nov 20, 2008 |