H5N2512CF
H5N2512CF is Silicon N Channel MOS FET High Speed Power Switching manufactured by Renesas.
Features
- Low on-resistance
- Low leakage current ..
- High Speed Switching
- Built-in fast recovery diode
Outline
TO-220CFM
1. Gate 2. Drain 3. Source
1 S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) IDR Note 1 IDR(pulse) Note 3 IAP Pch Note 2 θch-c Tch Tstg
Note 1
Ratings 250 ±30 18 72 18 72 18 35 3.57 150
- 55 to +150
Unit V V A A A A A W °C/W °C °C
Rev.1.00, Nov.26.2004, page 1 of 3
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance .. Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body- drain diode forward voltage Body- drain diode reverse recovery time Body- drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 250
- - 1.5
- 9
- -
- -
- -
- -
- -
- -
- Typ
- -
- - 0.082 16 2200 300 85 32 60 160 60 81 10 38 0.9 110 0.39 Max
- ±0.1 10 4.0 0.105
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