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H5N2512CF - Silicon N Channel MOS FET High Speed Power Switching

Key Features

  • Low on-resistance.
  • Low leakage current www. DataSheet4U. com.
  • High Speed Switching.
  • Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temp.

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Datasheet Details

Part number H5N2512CF
Manufacturer Renesas
File Size 101.74 KB
Description Silicon N Channel MOS FET High Speed Power Switching
Datasheet download datasheet H5N2512CF Datasheet

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H5N2512CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0481-0100 Rev.1.00 Nov.26.2004 Features • Low on-resistance • Low leakage current www.DataSheet4U.com • High Speed Switching • Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.