• Part: H5N2514P
  • Description: Silicon N Channel MOS FET High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 79.76 KB
Download H5N2514P Datasheet PDF
Renesas
H5N2514P
Features - Low on-resistance - Low leakage current .. - High speed switching Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IDR (pulse)Note1 IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 250 ±30 70 210 70 210 35 76.5 200 0.625 150 - 55 to +150 Unit V V A A A A A m J W °C/W °C °C Rev.1.00 May 25.2005 page 1 of 3 Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak...