H5N2512CF
Features
- Low on-resistance
- Low leakage current ..
- High Speed Switching
- Built-in fast recovery diode
Outline
TO-220CFM
1. Gate 2. Drain 3. Source
1 S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID(pulse) IDR Note 1 IDR(pulse) Note 3 IAP Pch Note 2 θch-c Tch Tstg
Note 1
Ratings 250 ±30 18 72 18 72 18 35 3.57 150
- 55 to +150
Unit V V A A A A A W °C/W °C °C
Rev.1.00, Nov.26.2004, page 1 of 3
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state...
