• Part: H5N2513PL
  • Description: Silicon N Channel MOS FET High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 105.76 KB
Download H5N2513PL Datasheet PDF
Renesas
H5N2513PL
Features - Low on-resistance - High speed switching .. - Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID Note1 ID (pulse) IDR IDR (pulse) Note1 Ratings 250 ±30 100 400 100 400 100 625 250 0.5 150 - 55 to +150 Unit V V A A A A A m J W °C/W °C °C IAP Note3 EAR Note3 Pch Note2 θch-c Tch Tstg REJ03G1243-0100 Rev.1.00 Jul 25, 2008 Page 1 of 3 Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero gate voltage...