H5N2513PL Datasheet | Renesas

Features - Low on-resistance - High speed switching .. - Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID Note1 ID (pulse) IDR IDR (pulse) Note1 Ratings 250 ±30 100 400 100 400 100 625 250 0.5 150 - 55 to +150 Unit V V A A A A A m J W °C/W °C °C IAP Note3 EAR Note3 Pch Note2 θch-c Tch Tstg REJ03G1243-0100 Rev.1.00 Jul 25, 2008 Page 1 of 3 Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance .. Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Min 250 - - 2.0 39 - - - - - - - - - - - - - Typ - - - - 65 0.020 9300 1200 280 90 420 550 400 330 45 175 1.2 210 Max - 10 ±0.1 4.0 - 0.026 - - - - - - - - - - 1.8 - Unit V µA µA V S Ω p F p F p F ns ns ns ns n C n C n C V ns Test conditions ID = 10 m A, VGS = 0 VDS = 250 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 m A ID = 50 A, VDS = 10 V Note4 ID = 50 A, VGS = 10 V Note4 VDS = 25 V, VGS = 0, f = 1 MHz ID = 50 A, VGS = 10 V, RL = 2.5 Ω, Rg = 10...