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H5N2513PL
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1243-0100 Rev.1.00 Jul 25, 2008
Features
• Low on-resistance • High speed switching www.DataSheet4U.com • Built-in fast recovery diode
Outline
RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL)
D
G
1. Gate 2. Drain (Flange) 3. Source
1
2
3
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.
H5N2513PL Datasheet
