H5N3008P Datasheet | Renesas

Features - Low on-resistance - Low leakage current .. - High speed switching - Built-in fast recovery diode Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) 1. Gate 2. Drain (Flange) 3. Source Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 Pch Note2 Tch Tstg Ratings 300 ±30 40 160 40 30 150 150 - 55 to +150 Unit V V A A A A W °C °C Rev.3.00 Oct 16, 2006 page 1 of 6 Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage Drain current Gate to Source leak current Gate to Source cutoff voltage Forward transfer admittance Static Drain to Source on state resistance Input capacitance Output capacitance .. Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total Gate charge Gate to Source charge Gate to Drain charge Body-Drain diode forward voltage Body-Drain diode reverse recovery time Body-Drain diode reverse recovery charge Notes: 4. Pulse test Symbol V(BR)DSS IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF trr Qrr Min 300 - - 2.0 19 - - - - - - - - - - - - - - Typ - - - - 32 0.058 5150 590 90 60 170 210 140 130 25 60 1.0 170 1.1 Max - 10 ±0.1 4.0 - 0.069 - - - - - - - - - - 1.5 - - Unit V µA µA V S Ω p F p F p F ns ns ns ns n C n C n C V ns µC Test conditions ID = 10 m A, VGS = 0 VDS = 300 V, VGS = 0 VGS = ±30 V, VDS = 0 VDS = 10 V, ID = 1 m A ID = 20 A, VDS = 10 V Note4 ID = 20 A, VGS = 10 VNote4 VDS = 25 V VGS = 0 f = 1 MHz ID = 20 A VGS = 10 V RL = 7.5 Ω Rg = 10 Ω VDD = 240 V VGS = 10 V ID = 40 A IF = 40 A, VGS = 0 Note4 IF = 40 A, VGS = 0 di F/dt = 100 A/µs Rev.3.00 Oct 16, 2006 page 2 of...