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H5N3004P - N-Channel MOSFET

Key Features

  • Low on-resistance.
  • Low leakage current.
  • High speed switching.
  • Low gate charge (Qg).
  • Avalanche ratings Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source H5N3004P www. DataSheet4U. com Absolute Maximum Ratings (Ta=25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com H5N3004P Silicon N Channel MOS FET High Speed Power Switching ADE-208-1523 (Z) Rev.0 Apr. 2002 Features • Low on-resistance • Low leakage current • High speed switching • Low gate charge (Qg) • Avalanche ratings Outline TO-3P D G 1 S 2 3 1. Gate 2. Drain (Flange) 3. Source H5N3004P www.DataSheet4U.com Absolute Maximum Ratings (Ta=25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.