Datasheet4U Logo Datasheet4U.com

H5N3007CF - N-Channel MOSFET

Key Features

  • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temp.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
H5N3011P N-Channel MOSFET INCHANGE
H5N2005DL MOSFET Renesas
H5N2005DL Silicon N Channel MOS FET High Speed Power Switching Hitachi Semiconductor
H5N2005DS MOSFET Renesas
H5N2005DS Silicon N Channel MOS FET High Speed Power Switching Hitachi Semiconductor

Other Datasheets by Renesas

Part Number Description
H5N3003P N-Channel MOSFET
H5N3004P N-Channel MOSFET
H5N3005LD Silicon N Channel MOS FET High Speed Power Switching
H5N3005LM Silicon N Channel MOS FET High Speed Power Switching
H5N3005LS Silicon N Channel MOS FET High Speed Power Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com H5N3007CF Silicon N Channel MOS FET High Speed Power Switching REJ03G0473-0100 Rev.1.00 Nov.11.2004 Features • • • • Low on-resistance Low leakage current High Speed Switching Built-in fast recovery diode Outline TO-220CFM D G 1. Gate 2. Drain 3. Source 1 S 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.