H5N3003P Datasheet | Renesas

Features - Low on-resistance - Low leakage current - High Speed Switching Outline TO-3P 1. Gate 2. Drain (Flange) 3. Source Rev.2.00, Aug.01.2003, page 1 of 9 .. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case Thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR IDR (pulse) Note1 IAPNote3 Pch Note2 Note1 Ratings 300 ±30 40 160 40 160 30 150 0.833 150 - 55 to +150 Unit V V A A A A A W °C /W °C °C θch-c Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Rev.2.00, Aug.01.2003, page 2 of 9 .. Electrical Characteristics (Ta = 25°C) Item Symbol Min 300 - - 3.0 20 - - - - - - - - - - - - - - Typ - - - - 35 0.058 5150 560 90 60 185 220 150 130 25 60 1.0 280 2.5 Max - 1 ±0.1 4.0 - Unit V µA µA V S Test Conditions ID = 10m A, VGS = 0 VDS = 300V, VGS = 0 VGS = ±30V, VDS = 0 VDS = 10V, ID = 1m A ID = 20A, VDS = 10VNote4 ID = 20A, VGS= 10VNote4 VDS = 25V VGS = 0 f = 1MHz ID= 20A RL = 7.5Ω VGS = 10V Rg=10 Ω VDD = 240V VGS = 10V ID = 40A IF = 40A, VGS = 0 IF = 40A, VGS = 0 di F/dt=100A/µs Drain to source breakdown voltage V(BR)DSS Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body- drain diode forward voltage IDSS IGSS VGS(off) |yfs| RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VDF 0. 069 Ω - -...