H7N0308LM Datasheet | Renesas

Features .. R - Low on-resistance DS (on) = 3.8 mΩ typ. - Low drive current - 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) H7N0308LD H7N0308LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) Rev.5.00 Apr 07, 2006 page 1 of 7 H7N0308LD, H7N0308LS, H7N0308LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel to ambient thermal impedance Channel temperature .. Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 30 ±20 70 280 70 100 1.25 89 150 - 55 to +150 Unit V V A A A W °C/W °C/W °C °C Pch θ ch-c Note 2 θ ch-a Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 30 ±20 - - 1.0 - -...