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H7N1002LD - Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

The H7N1002LD by Renesas Technology is a Silicon N Channel MOS FET High Speed Power Switching. Below is the official datasheet preview.

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H7N1002LD Silicon N Channel MOS FET High Speed Power Switching by Renesas Technology - Datasheet Preview — Official preview page of the H7N1002LD Silicon N Channel MOS FET High Speed Power Switching datasheet (Renesas Technology).

Datasheet Details

Part number	H7N1002LD
Manufacturer	Renesas Technology
File Size	146.11 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H7N1002LD_RenesasTechnology.pdf
Additional preview pages of the H7N1002LD datasheet.

H7N1002LD Product details

Features

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Low on-resistance DS (on) = 8 mΩ typ.
Low drive current.
Available for 4.5 V gate drive Outline.

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Published: Nov 20, 2008 |