• Part: H7N1002LD
  • Description: Silicon N Channel MOS FET High Speed Power Switching
  • Manufacturer: Renesas
  • Size: 146.11 KB
Download H7N1002LD Datasheet PDF
Renesas
H7N1002LD
H7N1002LD is Silicon N Channel MOS FET High Speed Power Switching manufactured by Renesas.
Features .. R - Low on-resistance DS (on) = 8 mΩ typ. - Low drive current - Available for 4.5 V gate drive Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 1. Gate 2. Drain 3. Source 4. Drain RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) H7N1002LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) H7N1002LM Rev.7.00 Apr 07, 2006 page 1 of 8 H7N1002LD, H7N1002LS, H7N1002LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature .. Storage temperature Symbol VDSS VGSS ID ID (pulse) IDR Note 1 Value 100 ±20 75 300 75 50 166 100 150 - 55 to +150 Unit V V A A A A m J W °C °C IAP Note 3 EAR Pch Tch Note 2 Note 3 Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 4. Pulse test Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr Min 100 ±20 - - 1.0 - - 57 - - - - - -...