H7N1002LS
H7N1002LS is Silicon N Channel MOS FET High Speed Power Switching manufactured by Renesas.
- Part of the H7N1002LD comparator family.
- Part of the H7N1002LD comparator family.
Features
.. R
- Low on-resistance DS (on) = 8 mΩ typ.
- Low drive current
- Available for 4.5 V gate drive
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) )
1. Gate 2. Drain 3. Source 4. Drain
RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) )
H7N1002LD
RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) )
H7N1002LM
Rev.7.00 Apr 07, 2006 page 1 of 8
H7N1002LD, H7N1002LS, H7N1002LM
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature
.. Storage temperature
Symbol VDSS VGSS ID ID (pulse) IDR
Note 1
Value 100 ±20 75 300 75 50 166 100 150
- 55 to +150
Unit V V A A A A m J W °C °C
IAP Note 3 EAR Pch Tch
Note 2
Note 3
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta =...
