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H7N1004AB - Silicon N Channel MOS FET High Speed Power Switching

Renesas Technology

The H7N1004AB by Renesas Technology is a Silicon N Channel MOS FET High Speed Power Switching. Below is the official datasheet preview.

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H7N1004AB Silicon N Channel MOS FET High Speed Power Switching by Renesas Technology - Datasheet Preview — Official preview page of the H7N1004AB Silicon N Channel MOS FET High Speed Power Switching datasheet (Renesas Technology).

Datasheet Details

Part number	H7N1004AB
Manufacturer	Renesas Technology
File Size	144.77 KB
Description	Silicon N Channel MOS FET High Speed Power Switching
Datasheet	H7N1004AB_RenesasTechnology.pdf
Additional preview pages of the H7N1004AB datasheet.

H7N1004AB Product details

Features

Low on-resistance RDS (on) =25 mΩ typ. www. DataSheet4U. com.
Low drive current.
Available for 4.5 V gate drive Outline.

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Other Datasheets by Renesas Technology

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Published: Nov 20, 2008 |