H7N1004FM Datasheet | Renesas

Features - - - - Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220FM 1 2 S 1. Gate 2. Drain 3. Source Rev.1.00, Aug.27.2003, page 1 of 9 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current .. Symbol VDSS VGSS ID ID (pulse) IDR IAP Note 3 EAR Pch Tch Tstg Note 3 Note 2 Note1 Value 100 ±20 25 100 100 15 22.5 25 150 - 55 to +150 Unit V V A A A A m J W °C °C Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Rev.1.00, Aug.27.2003, page 2 of 9 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol Min V(BR)DSS 100 Typ - - - - - 25 30 35 2800 240 140 50 9 11 23 110 70 9.5 0.89 45 Max - - ±10 10 2.5 35 45 - - - - - - - - - - - - - Unit V V µA µA V mΩ mΩ S p F p F p F n C n C n C ns ns ns ns V ns IF = 25 A, VGS = 0 IF = 25 A, VGS = 0 di F/dt = 100 A/µs Test conditions ID = 10 m A, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 ID = 1 m A, VDS = 10 V Note 1 ID = 12.5 A, VGS = 10 V Note 1 ID = 12.5 A, VGS = 4.5 V Note 1 ID = 12.5 A, VGS = 10 V Note 1 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 25 A VGS = 10 V, ID = 12.5 A RL = 2.4 Ω Rg = 4.7 Ω Gate to source breakdown voltage V(BR)GSS ±20 Gate to source leak current .. IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf...