* Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline TO-220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 Rev.1.00, Aug.27.2003, page 1 of 9 H7N1004FM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source volta
H7N1004FM Datasheet (136.69 KB)
H7N1004FM
Renesas ↗ Technology
136.69 KB
Silicon n channel mos fet high speed power switching.
H7N1004FM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0073-0100Z (Previous ADE-208-1463A(Z)) Rev.1.00 Aug.27.2003 www.DataSheet4U.com F.
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