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H7N1004LM - (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching

Download the H7N1004LM datasheet PDF. This datasheet also covers the H7N1004LD variant, as both devices belong to the same (h7n1004xx) silicon n-channel mosfet high-speed power switching family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004LS 3 3 H7N1004LM 1. Gate 2. Drain 3. Source 4. Drain H7N1004LD Rev.6.00, Aug.27.2003, page 1 of 11 H7N1004LD, H7N1004LS, H7N1004LM Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H7N1004LD_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H7N1004LM
Manufacturer Renesas
File Size 137.13 KB
Description (H7N1004xx) Silicon N-Channel MOSFET High-Speed Power Switching
Datasheet download datasheet H7N1004LM Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com H7N1004LD, H7N1004LS, H7N1004LM Silicon N-Channel MOSFET High-Speed Power Switching REJ03G0072-0600Z (Previous ADE-208-1552E(Z)) Rev.6.00 Aug.27.2003 Features • • • • Low on-resistance RDS(on) = 25 mΩ typ. Low drive current Available for 4.5 V gate drive Outline LDPAK 4 D 4 4 G 1 S 1 2 3 1 2 2 H7N1004LS 3 3 H7N1004LM 1. Gate 2. Drain 3. Source 4. Drain H7N1004LD Rev.6.00, Aug.27.
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