H7P0601DL
H7P0601DL is Silicon P Channel MOS FET High Speed Power Switching manufactured by Renesas.
Features
- Low on-resistance RDS(on) = 40 mΩ typ.
- Low drive current
- 4.5 V gate drive device can driven from 5 V source
Outline
DPAK-2
D 4
DPAK-S
G 1 2 S 1 2 3 3
H7P0601DS
H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain
Rev.1.00, Aug.05.2003, page 1 of 10
H7P0601DL, H7P0601DS
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current
..
Symbol VDSS VGSS ID ID (pulse) IDR IAP
Note3 Note3 Note2 Note1
Rating
- 60 ±20
- 20
- 80
- 20
- 12 12.3 25 150
- 55 to +150
Unit V V A A A A m J W °C °C
Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature
EAR Pch Tch
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω
Rev.1.00, Aug.05.2003, page 2 of 10
H7P0601DL, H7P0601DS
Electrical Characteristics
(Ta = 25°C)
Item Drain to source breakdown voltage Symbol Min V(BR)DSS
- 60 Typ
- -
- -...
