H7P1002DS Description
H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16,.
H7P1002DS Key Features
- Low on-resistance RDS(on) = 85 mΩ typ
- Low drive current
- 4.5 V gate drive device can driven from 5 V source