H7P1002DS - Silicon P Channel MOS FET High Speed Power Switching

This page provides the datasheet information for the H7P1002DS, a member of the H7P1002DL Silicon P Channel MOS FET High Speed Power Switching family.

Product Overview

Renesas Technology

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Datasheet Details

Part number	H7P1002DS
Manufacturer	Renesas Technology
File Size	153.89 KB
Description	Silicon P Channel MOS FET High Speed Power Switching
Datasheet	H7P1002DS Datasheet
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H7P1002DS Product details

Features

Low on-resistance RDS(on) = 85 mΩ typ. www. DataSheet4U. com.
Low drive current.
4.5 V gate drive device can driven from 5 V source Outline.

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H7P1002DL - Silicon P Channel MOS FET High Speed Power Switching
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H7P0601DS - Silicon P Channel MOS FET High Speed Power Switching

Published: Nov 20, 2008 |