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H7P0601DL Datasheet

Silicon P Channel Mos Fet High Speed Power Switching

Manufacturer: Renesas

H7P0601DL Overview

H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003.

H7P0601DL Key Features

  • Low on-resistance RDS(on) = 40 mΩ typ
  • Low drive current
  • 4.5 V gate drive device can driven from 5 V source

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