H7P0601DL Description
H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003.
H7P0601DL Key Features
- Low on-resistance RDS(on) = 40 mΩ typ
- Low drive current
- 4.5 V gate drive device can driven from 5 V source