H7P0601DS - Silicon P Channel MOS FET High Speed Power Switching

This page provides the datasheet information for the H7P0601DS, a member of the H7P0601DL Silicon P Channel MOS FET High Speed Power Switching family.

Product Overview

Renesas Technology

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Datasheet Details

Part number	H7P0601DS
Manufacturer	Renesas Technology
File Size	132.56 KB
Description	Silicon P Channel MOS FET High Speed Power Switching
Datasheet	H7P0601DS Datasheet
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H7P0601DS Product details

Features

Low on-resistance RDS(on) = 40 mΩ typ.
Low drive current.
4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 of 10 H7P0601DL, H7P0601DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. DataSheet4U. com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note3 Not.

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Published: Nov 20, 2008 |