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H7P0601DS - Silicon P Channel MOS FET High Speed Power Switching

Download the H7P0601DS datasheet PDF. This datasheet also covers the H7P0601DL variant, as both devices belong to the same silicon p channel mos fet high speed power switching family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS(on) = 40 mΩ typ.
  • Low drive current.
  • 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 of 10 H7P0601DL, H7P0601DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www. DataSheet4U. com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note3 Not.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H7P0601DL_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H7P0601DS
Manufacturer Renesas
File Size 132.56 KB
Description Silicon P Channel MOS FET High Speed Power Switching
Datasheet download datasheet H7P0601DS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Renesas

Part Number Description
H7P0601DL Silicon P Channel MOS FET High Speed Power Switching
H7P1002DL Silicon P Channel MOS FET High Speed Power Switching
H7P1002DS Silicon P Channel MOS FET High Speed Power Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H7P0601DL, H7P0601DS Silicon P Channel MOS FET High Speed Power Switching REJ03G0044-0100Z Rev.1.00 Aug.05.2003 www.DataSheet4U.com Features • Low on-resistance RDS(on) = 40 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 of 10 H7P0601DL, H7P0601DS Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.DataSheet4U.com Symbol VDSS VGSS ID ID (pulse) IDR IAP Note3 Note3 Note2 Note1 Rating –60 ±20 –20 –80 –20 –12 12.