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H7P0601DS Datasheet - Renesas Technology

Silicon P Channel MOS FET High Speed Power Switching

H7P0601DS Features

* Low on-resistance RDS(on) = 40 mΩ typ.

* Low drive current

* 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 of 10 H7P0601DL, H7P0601D

H7P0601DS Datasheet (132.56 KB)

Preview of H7P0601DS PDF

Datasheet Details

Part number:

H7P0601DS

Manufacturer:

Renesas ↗ Technology

File Size:

132.56 KB

Description:

Silicon p channel mos fet high speed power switching.

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H7P0601DS Silicon Channel MOS FET High Speed Power Switching Renesas Technology

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