H7P0601DS Features
* Low on-resistance RDS(on) = 40 mΩ typ.
* Low drive current
* 4.5 V gate drive device can driven from 5 V source Outline DPAK-2 D 4 DPAK-S 4 G 1 2 S 1 2 3 3 H7P0601DS H7P0601DL 1. Gate 2. Drain 3. Source 4. Drain Rev.1.00, Aug.05.2003, page 1 of 10 H7P0601DL, H7P0601D
H7P0601DL_RenesasTechnology.pdf
Datasheet Details
H7P0601DS, H7P0601DL
Renesas ↗ Technology
132.56 KB
Silicon p channel mos fet high speed power switching.
This datasheet PDF includes multiple part numbers: H7P0601DS, H7P0601DL.
Please refer to the document for exact specifications by model.
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H7P0601DS Distributor
