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H7P1002DS, H7P1002DL Datasheet - Renesas Technology

H7P1002DS Silicon P Channel MOS FET High Speed Power Switching

H7P1002DS Features

* Low on-resistance RDS(on) = 85 mΩ typ. www.DataSheet4U.com

* Low drive current

* 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D

H7P1002DL_RenesasTechnology.pdf

This datasheet PDF includes multiple part numbers: H7P1002DS, H7P1002DL. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

H7P1002DS, H7P1002DL

Manufacturer:

Renesas ↗ Technology

File Size:

153.89 KB

Description:

Silicon p channel mos fet high speed power switching.

Note:

This datasheet PDF includes multiple part numbers: H7P1002DS, H7P1002DL.
Please refer to the document for exact specifications by model.

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TAGS

H7P1002DS H7P1002DL Silicon Channel MOS FET High Speed Power Switching Renesas Technology

H7P1002DS Distributor