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H7P1002DS - Silicon P Channel MOS FET High Speed Power Switching

Download the H7P1002DS datasheet PDF. This datasheet also covers the H7P1002DL variant, as both devices belong to the same silicon p channel mos fet high speed power switching family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS(on) = 85 mΩ typ. www. DataSheet4U. com.
  • Low drive current.
  • 4.5 V gate drive device can driven from 5 V source Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H7P1002DL_RenesasTechnology.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H7P1002DS
Manufacturer Renesas
File Size 153.89 KB
Description Silicon P Channel MOS FET High Speed Power Switching
Datasheet download datasheet H7P1002DS Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Renesas

Part Number Description
H7P1002DL Silicon P Channel MOS FET High Speed Power Switching
H7P0601DL Silicon P Channel MOS FET High Speed Power Switching
H7P0601DS Silicon P Channel MOS FET High Speed Power Switching

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
H7P1002DL, H7P1002DS Silicon P Channel MOS FET High Speed Power Switching REJ03G1601-0100 Rev.1.00 Nov 16, 2007 Features • Low on-resistance RDS(on) = 85 mΩ typ. www.DataSheet4U.com • Low drive current • 4.5 V gate drive device can driven from 5 V source Outline RENESAS Package code: PRSS0004ZD-B (Package name: DPAK (L)-(2) ) 4 RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S) ) 4 D 1 2 3 G 1. Gate 2. Drain 3. Source 4. Drain H7P0601DS 1 2 3 S H7P0601DL Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.