HAT1095C - Silicon P-Channel Power MOSFET

Renesas

Key Features

Low on-resistance RDS(on) = 108 mΩ typ. (at VGS =.
4.5 V).
Low drive current.
1.8 V gate drive devices.
High density mounting Outline.

HAT1095C silicon p-channel power mosfet by Renesas - Datasheet Preview

Datasheet Details

Part number	HAT1095C
Manufacturer	Renesas
File Size	177.27 KB
Description	Silicon P-Channel Power MOSFET
Datasheet	HAT1095C Datasheet

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HAT1095C Silicon P Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 108 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 1.8 V gate drive devices. • High density mounting Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 5 4 6 3 2 1 Data Sheet R07DS1174EJ0600 (Previous: REJ03G1232-0500) Rev.6.00 Mar 19, 2014 2 34 5 D DD D 6 G S 1 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate Absolute Maximum Ratings Item Symbol Ratings Drain to Source voltage VDSS –12 Gate to Source voltage VGSS ±8 Drain current Drain peak current ID –2 ID(pulse)Note1 –8 Body - Drain diode reverse drain current IDR –2 Channel dissipation PchNote 2 830 Channel temperature Tch 150 Storage temperature Tstg –55 to +150 Notes: 1.