HAT1096C Description
HAT1096C Silicon P Channel MOS FET Power Switching REJ03G1233-0400 Rev.4.00 Jan 26, 2006.
HAT1096C Key Features
- Low on-resistance RDS(on) = 225 mΩ typ. (at VGS = -4.5 V)
- Low drive current
- 2.5 V gate drive devices
- High density mounting