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HAT2169N - Silicon N-Channel MOSFET

Renesas Technology

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Datasheet Details

Part number	HAT2169N
Manufacturer	Renesas Technology
File Size	137.64 KB
Description	Silicon N-Channel MOSFET
Datasheet	HAT2169N_RenesasTechnology.pdf

HAT2169N Product details

Features

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Capable.
High speed switching of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 3.1 mΩ typ. (at VGS = 10 V) Outline LFPAK-i 5 6 7 8 D D D D 1(S) 2(S) 3(S) 4(G) 4 G 8(D) 7(D) 6(D) 5(D) 2X XX 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode rever.

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Published: Nov 7, 2008 |