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Renesas Electronics Components Datasheet

HAT2183WP Datasheet

Silicon N Channel Power MOS FET Power Switching

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HAT2183WP pdf
HAT2183WP
Silicon N Channel Power MOS FET
Power Switching
Features
Low on-resistance
Low drive current
www.DataSheet4U.cHoimgh density mounting
Outline
RENESAS Package code: PWSN0008DA-A
(Package name: WPAK)
5 678
4 32 1
4
G
5 678
D DDD
REJ03G0530-0500
Rev.5.00
Oct 21, 2005
1, 2, 3 Source
4 Gate
5, 6, 7, 8 Drain
S SS
1 23
Absolute Maximum Ratings
Item
Drain to Source voltage
Gate to Source voltage
Drain current
Drain peak current
Body-Drain diode reverse Drain current
Body-Drain diode reverse Drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch 150°C
Symbol
VDSS
VGSS
ID
ID
Note1
(pulse)
IDR
IDR
Note1
(pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
Ratings
150
±30
20
40
20
40
20
30
30
4.17
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
A
A
mJ
W
°C/W
°C
°C
Rev.5.00, Oct 21, 2005, page 1 of 6


Renesas Electronics Components Datasheet

HAT2183WP Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2183WP pdf
HAT2183WP
Electrical Characteristics
Item
Drain to Source breakdown voltage
Zero Gate voltage Drain current
Gate to Source leak current
Gate to Source cutoff voltage
Forward transfer admittance
Static Drain to Source on state
resistance
Input capacitance
Output capacitance
www.DataSheetR4Ue.vceormse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body-Drain diode forward voltage
Body-Drain diode reverse recovery time
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|yfs|
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
trr
Min
150
3.0
9
Notes: 4. Pulse test
Typ
15
0.057
Max
1
±0.1
4.5
0.064
Unit
V
µA
µA
V
S
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
VDS = 150 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 10 A, VDS = 10 V Note4
ID = 10 A, VGS = 10 VNote4
1200 — pF VDS = 25 V
260 — pF VGS = 0
25 — pF f = 1 MHz
32 — ns ID = 10 A
53 — ns VGS = 10 V
69 — ns RL = 7.5
11 — ns Rg = 10
27
7
10
0.88
— nC VDD = 120 V
— nC VGS = 10 V
— nC ID = 20 A
1.4 V IF = 20 A, VGS = 0 Note4
110 — ns IF = 20 A, VGS = 0
diF/dt = 100 A/µs
Rev.5.00, Oct 21, 2005, page 2 of 6


Part Number HAT2183WP
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
Total Page 7 Pages
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HAT2183WP pdf
HAT2183WP Datasheet PDF
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