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HAT2200R - Silicon N-Channel Power MOSFET

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Renesas Technology

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HAT2200R Silicon N-Channel Power MOSFET by Renesas Technology - Datasheet Preview — Datasheet preview – HAT2200R

Datasheet Details

Part number	HAT2200R
Manufacturer	Renesas Technology
File Size	220.88 KB
Description	Silicon N-Channel Power MOSFET
Datasheet	HAT2200R Datasheet
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Product details

Features

Capable of 8 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 22 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0232-0201Z Rev.2.01 Nov.29.2016 Rev.2.01, Nov.29.2016, page 1 of 7 HAT2200R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 100 Gate to source voltage VGSS ±20 Drain current Drain peak current.

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Published: Apr 13, 2010 |