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HAT2200R - Silicon N-Channel Power MOSFET

Features

  • Capable of 8 V gate drive.
  • Low drive current.
  • High density mounting.
  • Low on-resistance RDS(on) = 22 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0232-0201Z Rev.2.01 Nov.29.2016 Rev.2.01, Nov.29.2016, page 1 of 7 HAT2200R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 100 Gate to source voltage VGSS ±20 Drain current Drain peak current.

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Datasheet Details

Part number HAT2200R
Manufacturer Renesas Technology
File Size 220.88 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2200R Datasheet
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Full PDF Text Transcription

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HAT2200R Silicon N Channel Power MOS FET Power Switching Features • Capable of 8 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 22 mΩ typ. (at VGS = 10 V) Outline SOP-8 8 7 65 56 7 8 DD D D 1 234 4 G SSS 12 3 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain REJ03G0232-0201Z Rev.2.01 Nov.29.2016 Rev.2.01, Nov.29.2016, page 1 of 7 HAT2200R Absolute Maximum Ratings Item Symbol Ratings Drain to source voltage VDSS 100 Gate to source voltage VGSS ±20 Drain current Drain peak current ID 8 ID(pulse)Note1 64 Body-drain diode reverse drain current IDR 8 Avalanche current IAP Note 2 8 Avalanche energy EAR Note 2 6.4 Channel dissipation Pch Note3 2.
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