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Renesas Electronics Components Datasheet

HAT2203C Datasheet

Silicon N Channel Power MOS FET Power Switching

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HAT2203C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 69 mtyp.(at VGS = 4.5 V)
Low drive current
High density mounting
2.5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK - 6)
Index
band
5
4
6
3
2
1
234 5
DDD D
6
G
S
1
www.DataSheet4U.com
REJ03G0447-0400
Rev.4.00
May 19.2005
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to Source voltage
VDSS
Gate to Source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - Drain diode reverse Drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
Ratings
20
±12
2
8
2
830
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.4.00 May.19, 2005 page 1 of 6


Renesas Electronics Components Datasheet

HAT2203C Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2203C
Electrical Characteristics
www.DataSheet4U.com
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Test conditions
Drain to Source breakdown voltage V(BR)DSS
20
V ID = 10 mA, VGS = 0
Gate to Source breakdown voltage V(BR)GSS ±12
IG = ±10 µA, VDS = 0
Gate to Source leak current
IGSS
— ±10 µA VGS = ±10 V, VDS = 0
Drain to Source leak current
IDSS
1
µA VDS = 20 V, VGS = 0
Gate to Source cutoff voltage
VGS(off)
0.4
1.4
V VDS = 10 V, ID = 1 mA
Drain to Source on state resistance RDS(on)
69
90 mID = 1 A, VGS = 4.5 VNote3
RDS(on)
107 150 mID = 1 A, VGS = 2.5 VNote3
Forward transfer admittance
|yfs| 3
4.5 —
S ID = 1 A, VDS = 10 V Note3
Input capacitance
Ciss — 165 —
pF VDS = 10 V
Output capacitance
Coss
50
pF VGS = 0
Reverse transfer capacitance
Crss
20
pF f = 1 MHz
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body - Drain diode forward voltage
Notes: 3. Pulse test
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
6—
5—
20 —
4—
1.8 —
0.4 —
0.4 —
0.8 1.1
ns ID = 1 A
ns VGS = 10 V
ns RL = 10
ns Rg = 4.7
nC VDD = 10 V
nC VGS = 4.5 V
nC ID = 2 A
V IF = 2 A, VGS = 0 Note3
Rev.4.00 May.19, 2005 page 2 of 6


Part Number HAT2203C
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
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