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Renesas Electronics Components Datasheet

HAT2268C Datasheet

Silicon N Channel Power MOS FET Power Switching

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HAT2268C
Silicon N Channel MOS FET
Power Switching
Features
Low on-resistance
RDS(on) = 27 mtyp. (at VGS = 10 V)
Low drive current.
High density mounting
4.5 V gate drive devices.
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
www.DataSheet4U.com
REJ03G1354-0200
Rev.2.00
Feb 28, 2006
23 45
DD DD
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID (pulse)Note1
Body - Drain diode reverse drain current
Channel dissipation
IDR
PchNote 2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1%
2. When using the glass epoxy board. (FR4 40 × 40 × 1.6 mm)
Ratings
30
+20 / –10
4
16
4
900
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.2.00 Feb 28, 2006 page 1 of 6


Renesas Electronics Components Datasheet

HAT2268C Datasheet

Silicon N Channel Power MOS FET Power Switching

No Preview Available !

HAT2268C
Electrical Characteristics
Item
Drain to Source breakdown voltage
Gate to Source breakdown voltage
Gate to Source leak current
Drain to Source leak current
Gate to Source cutoff voltage
Drain to Source on state resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn - on delay time
Rise time
Turn - off delay time
Fall time
Total Gate charge
Gate to Source charge
Gate to Drain charge
Body - Drain diode forward voltage
Notes: 3. Pulse test
Symbol
V(BR)DSS
V(BR)GSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
Min
30
+20
–10
1.0
5.5
Typ
27
37
8.5
440
110
45
15
50
45
7
8
1.5
1.3
0.85
Max
±10
1
2.0
34
54
1.15
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Unit
V
(Ta = 25°C)
Test conditions
ID = 10 mA, VGS = 0
IG = ±10 µA, VDS = 0
µA VGS = +16 / -8 V, VDS = 0
µA VDS = 30 V, VGS = 0
V VDS = 10 V, ID = 1 mA
mID = 2 A, VGS = 10 VNote3
mID = 2 A, VGS = 4.5 VNote3
S ID = 2 A, VDS = 10 V Note3
pF VDS = 10 V, VGS = 0,
pF f = 1 MHz
pF
ns ID = 2 A, VGS = 10 V,
ns VDD = 10 V, RL = 5 ,
ns Rg = 4.7
ns
nC VDD = 10 V, VGS = 10 V
nC ID = 4 A
nC
V IF = 4 A, VGS = 0 Note3
Rev.2.00 Feb 28, 2006 page 2 of 6


Part Number HAT2268C
Description Silicon N Channel Power MOS FET Power Switching
Maker Renesas Technology
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