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Renesas Electronics Components Datasheet

HAT2285WP Datasheet

Silicon N Channel Power MOS FET

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HAT2285WP
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Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G1371-0300
Rev.3.00
Apr 05, 2006
Features
Low on-resistance
Capable of 4.5 V gate drive
High density mounting
Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PWSN0008DB-A
(Package name: WPAK-D)
5 678
4 32 1
2
G1
78
D1 D1
56
S1/D2 S1/D2
4
G2
S1/D2(kelvin)
1
MOS1
S2
3
MOS2 and
Schottky Barrier Diode
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID(pulse)Note1
Reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW 10 µs, duty cycle 1 %
2. Tc = 25°C
MOS1
30
±20
14
56
14
8
150
–55 to +150
Ratings
MOS2 & SBD
30
±12
22
88
22
15
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
W
°C
°C
Rev.3.00 Apr 05, 2006 page 1 of 9


Renesas Electronics Components Datasheet

HAT2285WP Datasheet

Silicon N Channel Power MOS FET

No Preview Available !

HAT2285WP
Electrical Characteristics
• MOS1
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 3. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VDF
trr
Min
30
1.0
10
Typ
19
27
18
630
155
57
4.6
2.2
1.2
7
30
35
3.6
0.91
18
Max
±0.1
1
2.5
24
40
1.19
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Unit
V
µA
µA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±20 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID = 1 mA
ID = 7 A, VGS = 10 V Note3
ID = 7 A, VGS = 4.5 V Note3
ID = 7 A, VDS = 10 V Note3
VDS = 10 V, VGS = 0,
f = 1MHz
VDD = 10 V, VGS = 4.5 V,
ID = 14 A
VGS =10 V, ID = 7 A,
VDD 10 V, RL = 1.42 ,
Rg = 4.7
IF = 14 A, VGS = 0 Note3
IF =14 A, VGS = 0
diF/ dt = 100 A/µs
• MOS2 & Schottky Barrier Diode
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Schottky Barrier diode forward voltage
Body–drain diode reverse
recovery time
Notes: 3. Pulse test
Symbol
V(BR)DSS
IGSS
IDSS
VGS(off)
RDS(on)
RDS(on)
|yfs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VF
trr
Min
30
1.4
24
Typ
14
15
40
1930
300
130
18
5.8
4.5
10
20
45
4.0
0.5
16
Max
±0.1
1
2.5
18
23
Unit
V
µA
mA
V
m
m
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
ID = 10 mA, VGS = 0
VGS = ±12 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, ID =1 mA
ID =11 A, VGS = 10 V Note3
ID = 11 A, VGS = 4.5 V Note3
ID = 11 A, VDS = 10 V Note3
VDS = 10 V, VGS = 0,
f = 1MHz
VDD = 10 V, VGS = 4.5 V,
ID = 22 A
VGS = 10 V, ID = 11 A,
VDD 10 V, RL = 0.91 ,
Rg = 4.7
IF = 3.5 A, VGS = 0 Note3
IF = 22 A, VGS = 0
diF/ dt = 100 A/µs
Rev.3.00 Apr 05, 2006 page 2 of 9


Part Number HAT2285WP
Description Silicon N Channel Power MOS FET
Maker Renesas Technology
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