HAT2281C Datasheet | Renesas

.. Silicon N Channel MOS FET Power Switching REJ03G1328-0200 Rev.2.00 Jan 26, 2006 Features - Low on-resistance RDS(on) = 109 mΩ typ.(at VGS = 4.5 V) - Low drive current - High density mounting - 2.5 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK-6) Indexband 6 5 4 6 G 2 3 4 5 DD D D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate S...