HAT2281C Overview
HAT2281C Silicon N Channel MOS FET Power Switching REJ03G1328-0200 Rev.2.00 Jan 26, 2006.
HAT2281C Key Features
- Low on-resistance RDS(on) = 109 mΩ typ.(at VGS = 4.5 V)
- Low drive current
- High density mounting
- 2.5 V gate drive device
Datasheet Details
| Part number | HAT2281C |
|---|---|
| Manufacturer | Renesas |
| File Size | 106.11 KB |
| Description | Silicon N-Channel Power MOSFET |
| Datasheet | HAT2281C_RenesasTechnology.pdf |
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