Datasheet4U Logo Datasheet4U.com

HAT2287WP - Silicon N-Channel Power MOSFET

Key Features

  • Low on-resistance.
  • Low drive current.
  • High density mounting Outline.

📥 Download Datasheet

Datasheet Details

Part number HAT2287WP
Manufacturer Renesas
File Size 45.53 KB
Description Silicon N-Channel Power MOSFET
Datasheet download datasheet HAT2287WP Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HAT2201RJ N-Channel 100V MOSFET VBsemi
HAT200-S (HAT200-S - HAT1500-S) Current Transducer LEM
HAT2016R Silicon N-Channel Power MOSFET Hitachi Semiconductor
HAT2016R Silicon N-Channel Power MOSFET Renesas
HAT2016R Dual N-Channel 30V MOSFET VBsemi

Other Datasheets by Renesas

Part Number Description
HAT2281C Silicon N-Channel Power MOSFET
HAT2282C Silicon N-Channel Power MOSFET
HAT2285WP Silicon N-Channel Power MOSFET
HAT2200R Silicon N-Channel Power MOSFET
HAT2200WP Silicon N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HAT2287WP Silicon N Channel Power MOS FET Power Switching Features • Low on-resistance • Low drive current • High density mounting Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 678 4 4 32 1 G 5 678 D DDD REJ03G1470-0100 Rev.1.00 Sep 06, 2006 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain S SS 1 23 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3.