HAT2285WP
HAT2285WP is Silicon N-Channel Power MOSFET manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G1371-0310 Rev.3.10
May 13, 2010
Features
- Low on-resistance
- Capable of 4.5 V gate drive
- High density mounting
- Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PWSN0008DB-A (Package name: WPAK-D)
5 678
2 G1
4 32 1
78 D1 D1
56 S1/D2 S1/D2
4 G2
S1/D2(kelvin) 1
MOS1
S2 3
MOS2 and Schottky Barrier Diode
1, 3
Source
2, 4
Gate
5, 6, 7, 8...
