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M6MGD13TW66CWG-P Datasheet - Renesas Technology

CMOS FLASH MEMORY

M6MGD13TW66CWG-P Features

* Access Time Random Access/ Page Access Flash Mobile RAM Supply Voltage 70ns /25ns (Max.) 85ns /25ns (Max.) FM-VCC=2.7 ~ 3.0V Ta= -40 ~ 85 degree 72pin S-CSP, Ball pitch 0.80mm Outer-ball:Sn-Pb Ambient Temperature 64M-bit Mobile RAM is a 4,194,304 words high density RAM Package fabricated by CMOS te

M6MGD13TW66CWG-P General Description

The M6MGD13TW66CWG-P is a Stacked Chip Scale Package (S-CSP) that contents 128M-bit Flash memory and 64M-bit Mobile RAM in a 72-pin Stacked CSP with leaded solder ball. 128M-bit Flash memory is a 8,388,608 words, single power supply and high performance non-volatile memory fabricated by CMOS technol.

M6MGD13TW66CWG-P Datasheet (150.94 KB)

Preview of M6MGD13TW66CWG-P PDF

Datasheet Details

Part number:

M6MGD13TW66CWG-P

Manufacturer:

Renesas ↗ Technology

File Size:

150.94 KB

Description:

Cmos flash memory.
www.DataSheet4U.com Preliminary Notice: This is not a final specification. Some parametric limits are subject to change. Renesas LSIs M6MGD13TW66CW.

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M6MGD13TW66CWG-P CMOS FLASH MEMORY Renesas Technology

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