R2J20652ANP Datasheet, Renesas Technology

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* Based on Intel 6  6 DrMOS specification pin out Built-in power MOS FET suitable for N.

The R2J20652ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-cu.