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R2J20651ANP - MOSFET

General Description

The R2J20651ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package.

The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters.

Key Features

  • Compliant with Intel 6 × 6 DrMOS specification Built-in power MOS FET suitable for.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary R2J20651ANP Integrated Driver – MOS FET (DrMOS) REJ03G1792-0100 Rev.1.00 Jun 03, 2009 Description The R2J20651ANP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap Schottky barrier diode (SBD), eliminating the need for an external SBD for this purpose.