900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Renesas Electronics Components Datasheet

RJE0607JSP Datasheet

P-Channel MOSFET

No Preview Available !

RJE0607JSP
Silicon P Channel MOS FET Series
Power Switching
Preliminary Datasheet
R07DS0123EJ0200
(Previous: REJ03G1876-0100)
Rev.2.00
Sep 01, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
High endurance capability against to the short circuit.
Built-in the over temperature shut-down circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance RDS(on) : 140 mTyp, 260 mMax (VGS = –10 V)
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 (FP-8DAV))
8 7 65
DD
78
1 234
2
G
Gate Resistor
Current
Limitation
Circuit
4
G
Gate Resistor
Current
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
1
MOS1
S
MOS2
DD
56
1, 3
Source
2, 4
Gate
5, 6, 7, 8 Drain
3
S
Absolute Maximum Ratings
Item
Symbol
Ratings
Drain to source voltage
VDSS
–60
Gate to source voltage
VGSS
–16
Gate to source voltage
Drain current
VGSS
ID Note5
2.5
–1.5
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel dissipation
IDR
IAP Note 4
EAR Note 4
Pch Note 2
Pch Note 3
–1.5
–1.5
9.6
2
1.5
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. Value at Tc = 25C
2. 1 Drive operation : When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
3. 2 Drive operation : When using the glass epoxy board (FR4 40 40 1.6 mm), PW 10 s
4. Tch = 25C, Rg 50
5. It provides by the current limitation lower bound value.
(Ta = 25°C)
Unit
V
V
V
A
A
A
mJ
W
W
C
C
R07DS0123EJ0200 Rev.2.00
Sep 01, 2010
Page 1 of 7


Renesas Electronics Components Datasheet

RJE0607JSP Datasheet

P-Channel MOSFET

No Preview Available !

RJE0607JSP
Preliminary
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 6. Pulse test
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Min
–3.5
Vop
ID limt
–3.5
–1.5
Typ
–0.8
–0.35
175
Max
–1.2
–100
–50
–10
–12
Unit
V
V
A
A
A
mA
mA
C
V
A
(Ta = 25°C)
Test Conditions
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Vi = –1.2 V, VDS = 0
Vi = –8 V, VDS = 0
Vi = –3.5 V, VDS = 0
Channel temperature
(dv/dt VGS 500 V/ms)
VGS = –12 V, VDS = –10 V Note 4
Electrical Characteristics
Item
Drain current
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Symbol
ID1
ID2
ID3
V(BR)DSS
Min
–1.5
–60
V(BR)GSS
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS1
IDSS2
–16
2.5
Typ
–0.8
–0.35
Max
–2
–10
–100
–50
–10
100
–10
–10
Unit
A
mA
A
V
V
V
A
A
A
A
mA
mA
A
A
Gate to source cutoff voltage
Static drain to source on state
resistance
Output capacitance
VGS(off)
–2.2
–3.4
V
RDS(on)
185
380
m
RDS(on)
140
260
m
Coss
194
pF
Turn-on delay time
Rise time
Turn-off delay time
Fall time
td(on)
1.82
s
tr
1.95
s
td(off)
0.99
s
tf
0.84
s
Body-drain diode forward voltage
VDF
0.83
V
Body-drain diode reverse
trr
85
ns
recovery time
Over load shut down
operation time Note 8
tos1
18.6
ms
Notes: 7. Pulse test
8. Including the junction temperature rise of the over loaded condition.
(Ta = 25°C)
Test Conditions
VGS = –3.5 V, VDS = –10 V
VGS = –1.2 V, VDS = –10 V
VGS = –12 V, VDS = –10 V Note 7
ID = –10 mA, VGS = 0
IG = –800 A, VDS = 0
IG = 100 A, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VGS = –1.2 V, VDS = 0
VGS = 2.4 V, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VDS = –60 V, VGS = 0
VDS = –48 V, VGS = 0
Ta = 125C
VDS = –10 V, ID = –1 mA
ID = –0.75 A, VGS = –6 V Note 7
ID = –0.75 A, VGS = –10 V Note 7
VDS = –10 V, VGS = 0, f =
1MHz
VGS = –10 V, ID= –0.75 A,
RL = 40
IF = –1.5 A, VGS = 0
IF = –1.5 A, VGS = 0
diF/dt = 50 A/s
VGS = –5 V, VDD = –16 V
R07DS0123EJ0200 Rev.2.00
Sep 01, 2010
Page 2 of 7


Part Number RJE0607JSP
Description P-Channel MOSFET
Maker Renesas Technology
PDF Download

RJE0607JSP Datasheet PDF






Similar Datasheet

1 RJE0607JSP P-Channel MOSFET
Renesas Technology





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy