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RJE0607JSP - P-Channel MOSFET

Description

This FET has the over temperature shut-down capability sensing to the junction temperature.

This FET has the built-in over temperature shut-down circuit in the gate area.

Features

  • High endurance capability against to the short circuit.
  • Built-in the over temperature shut-down circuit.
  • Latch type shut down operation (need 0 voltage recovery).
  • Built-in the current limitation circuit.
  • Low on-resistance RDS(on) : 140 m Typ, 260 m Max (VGS =.
  • 10 V).
  • High density mounting Outline.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJE0607JSP Silicon P Channel MOS FET Series Power Switching Preliminary Datasheet R07DS0123EJ0200 (Previous: REJ03G1876-0100) Rev.2.00 Sep 01, 2010 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features  High endurance capability against to the short circuit.  Built-in the over temperature shut-down circuit.  Latch type shut down operation (need 0 voltage recovery).  Built-in the current limitation circuit.
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