Datasheet Summary
Silicon P Channel MOS FET Series Power Switching
Preliminary Datasheet
R07DS0123EJ0200 (Previous: REJ03G1876-0100)
Rev.2.00 Sep 01, 2010
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
- High endurance capability against to the short circuit.
- Built-in the over temperature shut-down circuit.
- Latch type shut down operation (need 0 voltage recovery).
- Built-in the current limitation...