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RJH60D1DPP-M0
Silicon N Channel IGBT Application: Inverter
Features
• High breakdown-voltage • Low on-voltage • Built-in diode
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Preliminary
REJ03G1839-0100 Rev.1.00 Oct 14, 2009
Outline
RENESAS Package code: PRSS0003AF-A (Package name: TO-220FL)
C
G
1. Gate 2. Collector 3. Emitter
1
2 3
E
Absolute Maximum Ratings
(Ta = 25°C)
Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2.