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RJH60F7ADPK
Silicon N Channel IGBT High Speed Power Switching
Features
• High speed switching • Low on-state voltage • Fast recovery diode
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Preliminary
REJ03G1837-0100 Rev.1.00 Oct 13, 2009
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
G
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
E
1
2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2.
RJH60F7ADPK Datasheet
