RJH60F7BDPQ-A0
RJH60F7BDPQ-A0 is IGBT manufactured by Renesas.
Preliminary Datasheet
600V
- 50A
- IGBT High Speed Power Switching
R07DS0677EJ0200 Rev.2.00
Nov 21, 2014
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Tj = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Tj = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
4 123
1. Gate 2. Collector G 3. Emitter 4....
