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RJH60F7BDPQ-A0 - IGBT

Product Overview

Renesas

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RJH60F7BDPQ-A0 IGBT by Renesas - Datasheet Preview — Datasheet preview – RJH60F7BDPQ-A0

Datasheet Details

Part number	RJH60F7BDPQ-A0
Manufacturer	Renesas
File Size	212.20 KB
Description	IGBT
Datasheet	RJH60F7BDPQ-A0 Datasheet
Additional preview pages of the RJH60F7BDPQ-A0 datasheet.

Product details

Features

Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Tj = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Tj = 25°C, inductive load) Outline.

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Published: Jul 20, 2012 |