RJH60F3DPK
Overview
- Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0199EJ0200 Rev.2.00 Dec 01, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 G
- Collector
- Emitter
- Collector (Flange) E 1 2
