Datasheet Summary
Preliminary Datasheet
Silicon N Channel IGBT High Speed Power Switching
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.4 V typ. (IC = 20 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching tf = 92 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0199EJ0200 Rev.2.00 Dec 01, 2010
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
1. Gate 2. Collector 3. Emitter 4. Collector (Flange)
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