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RJH60F6DPK Datasheet Silicon N-channel IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH60F6DPK Silicon N Channel IGBT High Speed Power.

RJH60F6DPK datasheet preview

Datasheet Details

Part number	RJH60F6DPK
Manufacturer	Renesas
File Size	103.47 KB
Description	Silicon N-Channel IGBT
Datasheet	RJH60F6DPK_RenesasTechnology.pdf

Key Features

Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C) REJ03G1940-0100 Rev.1.00 Jun 18, 2010 Outline.

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