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RJH60F6DPK

Manufacturer: Renesas

RJH60F6DPK datasheet by Renesas.

RJH60F6DPK datasheet preview

RJH60F6DPK Datasheet Details

Part number RJH60F6DPK
Datasheet RJH60F6DPK_RenesasTechnology.pdf
File Size 103.47 KB
Manufacturer Renesas
Description Silicon N-Channel IGBT
RJH60F6DPK page 2 RJH60F6DPK page 3

RJH60F6DPK Overview

Preliminary Datasheet RJH60F6DPK Silicon N Channel IGBT High Speed Power Switching.

RJH60F6DPK Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)
  • Built in fast recovery diode in one package
  • Trench gate and thin wafer technology

RJH60F6DPQ-A0 from other manufacturers

View RJH60F6DPQ-A0 datasheet index

Brand Logo Part Number Description Other Manufacturers
Renesas Logo RJH60F6DPQ-A0 High Speed Power Switching Renesas
Renesas Logo RJH60F6BDPQ-A0 IGBT Renesas
Renesas logo - Manufacturer

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