RJH60F6DPK Datasheet | Renesas

Features - Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C) - Built in fast recovery diode in one package - Trench gate and thin wafer technology - High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C) REJ03G1940-0100 Rev.1.00 Jun 18, 2010 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 4 1. Gate 2. Collector 3. Emitter 4. Collector (Flange) Absolute Maximum Ratings (Tc = 25°C) Item Collector to emitter voltage Gate to emitter voltage Collector current Tc = 25 °C Tc = 100 °C Collector peak current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal impedance (IGBT) Junction to case thermal impedance (Diode) Junction temperature Storage temperature Notes: 1. Pulse width limited by safe operating area. 2. PW  5 s, duty cycle  1% Symbol VCES VGES IC IC ic(peak) Note1 i DF(peak) Note2 PC j-c j-c Tj Tstg Ratings 600 ±30 85 45 170 100 297.6 0.42 2.0 150 - 55 to +150 Unit V V A A A A W °C/W °C/W °C °C REJ03G1940-0100 Rev.1.00 Jun 18, 2010 Page 1 of 6 .Data Sheet.in Preliminary Electrical Characteristics (Tj = 25°C) Item Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Switching time Symbol ICES IGES VGE(off) VCE(sat) Cies Coes Cres td(on) tf td(off) tf VECF1 VECF2 trr Min   4            Typ    1.35 3800 150 65 41 24 91 95 1.6 1.8 140 Max 100 ±1 8 1.75        2.1   Unit A A V V p F p F p F ns ns ns ns V V ns Test Conditions VCE = 600V, VGE = 0 VGE = ±30 V, VCE = 0 VCE = 10V, IC = 1 m A IC = 45 A, VGE = 15V Note3 VCE = 25 V VGE = 0 V f = 1 MHz IC = 30 A, Resistive Load VCC = 300 V VGE = 15 V Note3 Rg = 5  IF = 20 A IF = 40 A Note3 Note3 C-E diode forward voltage C-E diode reverse recovery...