RJH60F6DPK - Silicon N-Channel IGBT

Product Overview

Renesas Technology

Datasheet Details

Part number	RJH60F6DPK
Manufacturer	Renesas Technology
File Size	103.47 KB
Description	Silicon N-Channel IGBT
Datasheet	RJH60F6DPK Datasheet
Additional preview pages of the RJH60F6DPK datasheet.

RJH60F6DPK Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tf = 95 ns typ. (at IC = 30 A, Resistive Load, VCC = 300 V, VGE = 15 V, Rg = 5 , Ta = 25°C) REJ03G1940-0100 Rev.1.00 Jun 18, 2010 Outline.

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Published: Nov 8, 2010 |