RJH60F6DPK Description
Preliminary Datasheet RJH60F6DPK Silicon N Channel IGBT High Speed Power Switching.
RJH60F6DPK Key Features
- Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology