RJH60F6BDPQ-A0 - IGBT

Product Overview

Renesas

Datasheet Details

Part number	RJH60F6BDPQ-A0
Manufacturer	Renesas
File Size	159.54 KB
Description	IGBT
Datasheet	RJH60F6BDPQ-A0 Datasheet
Additional preview pages of the RJH60F6BDPQ-A0 datasheet.

Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0632EJ0100 Rev.1.00 Feb 17, 2012 Outline.

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Published: Jul 20, 2012 |