RJH60F6BDPQ-A0
RJH60F6BDPQ-A0 is IGBT manufactured by Renesas.
Preliminary Datasheet
600V
- 45A
- IGBT High Speed Power Switching
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.35 V typ. (at IC = 45 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0632EJ0100 Rev.1.00 Feb 17, 2012
Outline
RENESAS Package code: PRSS0003ZH-A (Package name: TO-247A)
4 G
1. Gate 2. Collector 3. Emitter 4. Collector
1 2
.DataSheet.net/...
