Datasheet4U.com

RJH60F5DPK Datasheet Silicon N-channel IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH60F5DPK Silicon N Channel IGBT High Speed Power Switching R07DS0055EJ0300 Rev.3.

RJH60F5DPK datasheet preview

Datasheet Details

Part number	RJH60F5DPK
Manufacturer	Renesas
File Size	85.79 KB
Description	Silicon N-Channel IGBT
Datasheet	RJH60F5DPK_RenesasTechnology.pdf

Key Features

Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C).
Built in fast recovery diode in one package.
Trench gate and thin wafer technology.
High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) Outline.

Similar Datasheet

Brand Logo	Part Number	Description	Manufacturer
	RJH60F5DPQ-A0	High Speed Power Switching	Renesas
	RJH60F5BDPQ-A0	IGBT	Renesas

More Datasheets from Renesas

Part Number	Description
RJH60F0DPK	Silicon N Channel IGBT
RJH60F4DPK	Silicon N Channel IGBT
RJH60F6DPK	Silicon N-Channel IGBT
RJH60F7ADPK	Silicon N Channel IGBT
RJH60C9DPD	Silicon N Channel IGBT
RJH60D0DPK	Silicon N Channel IGBT
RJH60D1DPE	Silicon N Channel IGBT
RJH60D1DPP-M0	Silicon N-Channel IGBT
RJH60D2DPE	Silicon N Channel IGBT
RJH60D2DPP-M0	Silicon N Channel IGBT

RJH60F5DPK Distributor