RJH60F5DPK
RJH60F5DPK is manufactured by Renesas.
Preliminary Datasheet
Silicon N Channel IGBT High Speed Power Switching
R07DS0055EJ0300 Rev.3.00
Nov 24, 2010
Features
- Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C)
- Built in fast recovery diode in one package
- Trench gate and thin wafer technology
- High speed switching tr = 85 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load)
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
C 4
1 23
1. Gate
2. Collector
3. Emitter
4. Collector...
