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RJH60F5BDPQ-A0 Datasheet IGBT

Manufacturer: Renesas

Overview: Preliminary Datasheet RJH60F5BDPQ-A0 600V - 40A - IGBT High Speed Power.

Key Features

  • Low collector to emitter saturation voltage VCE(sat) = 1.37 V typ. (IC = 40 A, VGE = 15 V, Ta = 25°C).
  • Built in fast recovery diode in one package.
  • Trench gate and thin wafer technology.
  • High speed switching tf = 68 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 , Ta = 25°C, inductive load) R07DS0631EJ0100 Rev.1.00 Feb 17, 2012 Outline.

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RJH60F5BDPQ-A0 Distributor