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RJK5003DPD
Silicon N Channel Power MOS FET High Speed Power Switching Use
REJ03G0580-0200 Rev.2.00 Mar 14, 2006
Features
• • • • VDSS : 500 V RDS(on) : 1.5 Ω (MAX.) ID : 5 A Surface mount package (MP-3A)
Outline
RENESAS Package code: PRSS0004ZA-A (Package name : MP-3A)
4 1. 2. 3. 4. Gate Drain Source Drain 2, 4
1 12 3
3
Applications
• Lighting ballast, SMPS, etc.
Maximum Ratings
(Tc = 25°C)
Parameter Drain to source voltage Gate to source voltage Drain current Drain Peak current Avalanche current Channel dissipation Channel temperature Storage temperature Channel to case thermal impedance Note: Symbol VDSS VGSS ID ID (pulse)Note1 IAP Pch Tch Tstg θch-c Ratings 500 ±30 5 20 5 62.5 150 –55 to +150 2.
RJK5003DPD Datasheet
