RJK5002DJE Overview
RJK5002DJE 500V - 2.4A - MOS FET High Speed Power Switching.
RJK5002DJE Key Features
- Low on-state resistance RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)
- High speed switching
RJK5002DJE datasheet by Renesas.
| Part number | RJK5002DJE |
|---|---|
| Datasheet | RJK5002DJE-RenesasTechnology.pdf |
| File Size | 63.62 KB |
| Manufacturer | Renesas |
| Description | High Speed Power Switching MOS FET |
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RJK5002DJE 500V - 2.4A - MOS FET High Speed Power Switching.
| Part Number | Description |
|---|---|
| RJK5003DPD | Silicon N Channel Power MOS FET |
| RJK5009DPP | Silicon N Channel Power MOS FET |
| RJK5012DPE | Silicon N Channel MOS FET High Speed Power Switching |
| RJK5012DPP | Silicon N-Channel MOSFET |
| RJK5013DPE | Silicon N Channel Power MOS FET |
| RJK5013DPK | Silicon N Channel MOS FET High Speed Power Switching |
| RJK5013DPP | Silicon N Channel MOS FET High Speed Power Switching |
| RJK5014DPK | Silicon N Channel MOS FET High Speed Power Switching |
| RJK5014DPP | Silicon N-Channel MOSFET |
| RJK5015DPK | Silicon N-Channel MOSFET |