RJK5002DJE Description
RJK5002DJE 500V - 2.4A - MOS FET High Speed Power Switching.
RJK5002DJE Key Features
- Low on-state resistance RDS(on) = 3.83 typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)
- High speed switching
- Part: RJK5002DJE
- Manufacturer: Renesas
- Size: 63.62 KB
Related Renesas Datasheets
| Part Number | Description |
|---|---|
| RJK5003DPD | Silicon N Channel Power MOS FET |
| RJK5009DPP | Silicon N Channel Power MOS FET |
| RJK5012DPE | Silicon N Channel MOS FET High Speed Power Switching |
| RJK5012DPP | Silicon N-Channel MOSFET |
| RJK5013DPE | Silicon N Channel Power MOS FET |