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RJK5002DJE - High Speed Power Switching MOS FET

General Description

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Key Features

  • Low on-state resistance RDS(on) = 3.83  typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C).
  • High speed switching Outline.

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Datasheet Details

Part number RJK5002DJE
Manufacturer Renesas
File Size 63.62 KB
Description High Speed Power Switching MOS FET
Datasheet download datasheet RJK5002DJE Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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RJK5002DJE 500V - 2.4A - MOS FET High Speed Power Switching Features  Low on-state resistance RDS(on) = 3.83  typ. (at ID = 1.2 A, VGS = 10 V, Ta = 25C)  High speed switching Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) G 321 Absolute Maximum Ratings Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Channel dissipation VDSS VGSS ID Note1 ID(pulse) Note3 IDR Note1 IDR(pulse) Note3 Pch Note 2 Channel to ambient thermal Impedance ch-a Channel temperature Tch Storage temperature Tstg Notes: 1. Limited by Tch max. 2. Value at Tc = 25C 3. Pulse width limited by safe operating area. Preliminary Datasheet R07DS0844EJ0100 Rev.1.